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S29WS064RABBHW010
S29WS064RABBHW010
Flash S29WS064RABBHW010
Cypress
S29WS064RABBHW010
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Bank Size16/16/16/16Mb
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size16Words
Pin Count84
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed84
Part StatusObsolete
Sector Size64Kbyte x 127|16Kbyte x 4
Timing TypeSynchronous|Asynchronous
ArchitectureSectored
Package Width8
Interface TypeParallel|Serial
Package Height0.76(Max)
Package Length11.6
Number of Banks4
Number of Words4M
ProgrammabilityYes
Supplier PackageTFBGA
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleYes
OE Access Time (ns)13.5
Program Current (mA)40
Support of Page ModeYes
Max. Access Time (ns)80
Standard Package NameBGA
Location of Boot BlockBottom
Maximum Erase Time (S)453/Chip
Operating Current (mA)80
Address Bus Width (bit)22
Programming Voltage (V)8.5 to 9.5|1.7 to 1.95
Number of Bits/Word (bit)16
Supplier Temperature GradeWireless
Maximum Page Access Time (ns)20
Maximum Programming Time (ms)78600/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel/Serial 1.8V 64M-bit 4M x 16 80ns 84-Pin TFBGA Tray
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