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S29WS512PABBFW0002
S29WS512PABBFW0002
Flash S29WS512PABBFW0002
Cypress
S29WS512PABBFW0002
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Bank Size32/32/32/32/32/32/32/32/32/32/32/32/32/32/32/32Mb
Cell TypeNOR
ECCN (US)3A991.B.1.A
PackagingTray
Page Size8Words
Pin Count84
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportNo
PCB changed84
Part StatusObsolete
Sector Size32Kbyte x 8|128Kbyte x 510
Timing TypeAsynchronous|Synchronous
ArchitectureSectored
Package Width8
Interface TypeParallel|Serial
Package Height0.76(Max)
Package Length11.6
Number of Banks16
Number of Words32M
ProgrammabilityYes
Supplier PackageVTFBGA
Block OrganizationAsymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology90nm
OE Access Time (ns)7.6
Program Current (mA)0.005
Support of Page ModeYes
Max. Access Time (ns)80
Standard Package NameBGA
Maximum Erase Time (s)1544/Chip
Operating Current (mA)80
Page Read Current (mA)15
Address Bus Width (bit)25
Programming Voltage (V)1.7 to 1.95|8.5 to 9.5
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeWireless
Maximum Page Access Time (ns)20
Maximum Programming Time (ms)0.15/Word
Maximum Operating Frequency (MHz)104
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel/Serial 1.8V 512M-bit 32M x 16 80ns 84-Pin VTFBGA Tray
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