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S34ML01G100BHV003
S34ML01G100BHV003
Flash S34ML01G100BHV003
Cypress
S34ML01G100BHV003
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
Page Size2Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed63
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words128M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
Process Technology4nm
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.003/Block
Operating Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Maximum Programming Time (ms)0.7
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
SLC NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 63-Pin BGA T/R
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