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S34ML01G100TFV000
S34ML01G100TFV000
Flash S34ML01G100TFV000
Cypress
S34ML01G100TFV000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed48
Part StatusObsolete
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words128M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
Process Technology4nm
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.003/Block
Operating Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Maximum Programming Time (ms)0.7
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 48-Pin TSOP-I Tray
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