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Flash S34ML01G200GHI003
Cypress
S34ML01G200GHI003
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
PackagingTape and Reel
Page Size2Kbyte
Pin Count67
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed67
Part StatusObsolete
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.5
Interface TypeParallel
Package Height1(Max) - 0.22(Min)
Package Length8
Number of Words128M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
Process Technology32nm
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25(Min)
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 67-Pin BGA T/R
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