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S34ML02G100BHI000
S34ML02G100BHI000
Flash S34ML02G100BHI000
Cypress
S34ML02G100BHI000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)EAR99
Page Size2Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed63
Part StatusActive
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words256M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleYes
Process Technology4nm
Program Current (mA)40
Support of Page ModeYes
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 2G-bit 256M x 8 63-Pin BGA Tray
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