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Flash S34ML02G100TFI000
Cypress
S34ML02G100TFI000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)EAR99
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed48
Part StatusUnconfirmed
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words256M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleYes
Program Current (mA)40
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 2G-bit 256M x 8 48-Pin TSOP-I
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