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S34ML02G104TFI000
S34ML02G104TFI000
Flash S34ML02G104TFI000
Cypress
S34ML02G104TFI000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
PackagingTray
Page Size1KWords
Pin Count48
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed48
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words128M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)20
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 2G-bit 128M x 16 20ns 48-Pin TSOP-I Tray
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