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S34ML04G100TFI000-DEL
S34ML04G100TFI000-DEL
Flash S34ML04G100TFI000-DEL
Cypress
S34ML04G100TFI000-DEL
--
Memory
Flash
Specification
Product AttributeAttribute Value
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2Kbyte
Boot BlockNo
ECC SupportYes
Part StatusAcquired
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words512M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)20
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 20ns 48-Pin TSOP-I Tray
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