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S34ML04G300BHI100
S34ML04G300BHI100
Flash S34ML04G300BHI100
Cypress
S34ML04G300BHI100
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size4Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed63
Part StatusUnconfirmed
Sector Size256Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words512M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)35
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)35
Address Bus Width (bit)31
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 63-Pin VFBGA Tray
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