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S34ML04G300BHI103
S34ML04G300BHI103
Flash S34ML04G300BHI103
Cypress
S34ML04G300BHI103
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size4Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed63
Part StatusUnconfirmed
Sector Size256Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words512M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)35
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)35
Address Bus Width (bit)31
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 63-Pin VFBGA T/R
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