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S34MS04G100TFB000
S34MS04G100TFB000
Flash S34MS04G100TFB000
Cypress
S34MS04G100TFB000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPUnknown
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
PackagingTray
Page Size2Kbyte
Pin Count48
AutomotiveYes
Boot BlockNo
ECC SupportYes
PCB changed48
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words512M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Maximum Erase Time (S)0.01/Block
Operating Current (mA)20
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial Plus
Maximum Page Access Time (ns)45(Min)
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 4G-bit 512M x 8 Automotive 48-Pin TSOP-I Tray
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