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S34MS04G200BHV003
S34MS04G200BHV003
Flash S34MS04G200BHV003
Cypress
S34MS04G200BHV003
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
Page Size2Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed63
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words512M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleYes
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 4G-bit 512M x 8 63-Pin BGA T/R
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