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S34MS04G200TFI003
S34MS04G200TFI003
Flash S34MS04G200TFI003
Cypress
S34MS04G200TFI003
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)EAR99
PackagingTape and Reel
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed48
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words512M
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.0035(Typ)/Block
Operating Current (mA)30
Address Bus Width (bit)30
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)45(Min)
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 4G-bit 512M x 8 48-Pin TSOP-I T/R
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