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S70GL02GT11FHB010
S70GL02GT11FHB010
Flash S70GL02GT11FHB010
Infineon
S70GL02GT11FHB010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPYes
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size512byte
Pin Count64
AutomotiveYes
Boot BlockYes
ECC SupportNo
PCB changed64
Part StatusActive
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height1.4(Max) - 0.4(Min)
Package Length13
Number of Words256M/128M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleYes
Process Technology45nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)110
Location of Boot BlockBottom|Top
Operating Current (mA)60
Address Bus Width (bit)27
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Page Access Time (ns)20
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 2G-bit 256M x 8/128M x 16 110ns Automotive 64-Pin Fortified BGA Tray
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