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SST26VF016BAT-104I/MF
SST26VF016BAT-104I/MF
Flash SST26VF016BAT-104I/MF
Microchip Technology
SST26VF016BAT-104I/MF
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size256byte
AutomotiveNo
Boot BlockNo
ECC SupportNo
Part StatusUnconfirmed
Sector Size4Kbyte x 512
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words16M/8M/4M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)16M
Command CompatibleYes
Process TechnologyCMOS
Program Current (mA)25
Support of Page ModeNo
Max. Access Time (ns)8
Maximum Erase Time (S)0.05/Chip
Operating Current (mA)20
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)1.5/Page
Maximum Operating Frequency (MHz)104
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 16M-bit 16M/8M/4M x 1/2-bit/4-bit 8ns T/R
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