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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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Flash SST26VF080AT-104I/SN
Microchip Technology
SST26VF080AT-104I/SN
--
Memory
Flash
SST26VF080AT-104I/SN.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
Cell TypeNOR
ECCN (US)EAR99
Page Size256byte
Boot BlockNo
ECC SupportNo
Part StatusActive
Sector Size4Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words8M/4M/2M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)8M
Command CompatibleYes
Process TechnologyCMOS
Program Current (mA)25
Support of Page ModeNo
Max. Access Time (ns)8
Maximum Erase Time (S)0.05/Chip
Operating Current (mA)20
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)1.5/Page
Maximum Operating Frequency (MHz)104
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 8M-bit 8M/4M/2M x 1/2-bit/4-bit 8ns
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