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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SST26WF080BAT-104I/NP
SST26WF080BAT-104I/NP
Flash SST26WF080BAT-104I/NP
Microchip Technology
SST26WF080BAT-104I/NP
--
Memory
Flash
SST26WF080BAT-104I/NP.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockYes
Lead ShapeNo Lead
ECC SupportNo
PCB changed8
Part StatusActive
Sector Size4Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Package Width3
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.53
Package Length2
Number of Words8M/4M/2M
ProgrammabilityYes
Supplier PackageUSON EP
Block OrganizationSymmetrical
Chip Density (bit)8M
Command CompatibleYes
Process TechnologyCMOS
Program Current (mA)25
Support of Page ModeNo
Max. Access Time (ns)8
Standard Package NameSON
Location of Boot BlockBottom|Top
Maximum Erase Time (s)0.05/Chip
Operating Current (mA)20
Address Bus Width (bit)32
Programming Voltage (V)1.65 to 1.95
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)1.5/Page
Maximum Operating Frequency (MHz)104
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.65
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 8M-bit 8M/4M/2M x 1/2-bit/4-bit 8ns 8-Pin USON EP T/R
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