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TE28F640J3D75E
TE28F640J3D75E
Flash TE28F640J3D75E
Micron Technology
TE28F640J3D75E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size4Words/8Words
Pin Count56
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportNo
PCB changed56
Part StatusObsolete
Sector Size128Kbyte x 64
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length14
Number of Words8M/4M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)64M
Command CompatibleYes
OE Access Time (ns)25
Program Current (mA)70
Support of Page ModeYes
Max. Access Time (ns)75
Standard Package NameSOP
Maximum Erase Time (s)4/Block
Page Read Current (mA)15@5MHz|20@5MHz
Address Bus Width (bit)23/22
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)0.175/Byte
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 75ns 56-Pin TSOP Tray
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