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12A02SS-TL-E
12A02SS-TL-E
GP BJT 12A02SS-TL-E
onsemi
12A02SS-TL-E
--
Diodes, Transistors and Thyristors
GP BJT
12A02SS-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width0.8
Package Height0.63(Max)
Package Length1.4
Product CategoryBipolar Small Signal
Supplier PackageSSFP
Minimum DC Current Gain300@10mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)15
Maximum Transition Frequency (MHz)450(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.2@20mA@400mA
Maximum Collector-Emitter Saturation Voltage (V)0.24@20mA@400mA
Description
Trans GP BJT PNP 12V 0.8A 200mW 3-Pin SSFP
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