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GP BJT 2DB1132R-13
Diodes Incorporated
2DB1132R-13
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single Dual Collector |
| Package Width | 2.6(Max) |
| Package Height | 1.6(Max) |
| Package Length | 4.6(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SOT-89 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 180@100mA@3V |
| Supplier Temperature Grade | Commercial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 190(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 32 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@50mA@500mA |
| Description |
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