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GP BJT 2DB1182Q-13
Diodes Incorporated
2DB1182Q-13
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Yes |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 6.1 |
| Package Height | 2.29 |
| Package Length | 6.58 |
| Product Category | Bipolar Power |
| Supplier Package | TO-252 |
| Standard Package Name | TO-252 |
| Minimum DC Current Gain | 120@0.5A@3V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1200 |
| Maximum DC Collector Current (A) | 2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 110(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 32 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.8@0.2A@2A |
| Description |
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