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2N1481
2N1481
GP BJT 2N1481
Microchip Technology
2N1481
--
Diodes, Transistors and Thyristors
GP BJT
2N1481.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Minimum DC Current Gain35@200mA@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)12
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Collector-Emitter Saturation Voltage (V)0.75@10mA@200mA
Description
Trans GP BJT NPN 40V 1.5A 1000mW 3-Pin TO-5 Bag
Environmental Documents
Product Compliance
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