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2N2102
2N2102
GP BJT 2N2102
Microchip Technology
2N2102
--
Diodes, Transistors and Thyristors
GP BJT
2N2102.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Maximum DC Collector Current (A)1
Maximum Collector-Emitter Voltage (V)65
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.015mA@0.15mA
Description
Trans GP BJT NPN 65V 1A 1000mW 3-Pin TO-39 Bag
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