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2N2150
2N2150
GP BJT 2N2150
Microchip Technology
2N2150
--
Diodes, Transistors and Thyristors
GP BJT
2N2150.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingStud
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeTerminal Stud
PCB changed4
Part StatusObsolete
ConfigurationSingle
Package Width11.12(Max)
Package Length12.83(Max)
Product CategoryBipolar Power
Supplier PackageTO-111
Minimum DC Current Gain20@1A@5V|20@0.5A@5V|20@0.1A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)30000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)150
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.2@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)1@0.1A@1A
Description
Trans GP BJT NPN 100V 2A 4-Pin TO-111
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