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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2N2221AUA
2N2221AUA
GP BJT 2N2221AUA
Microchip Technology
2N2221AUA
--
Diodes, Transistors and Thyristors
GP BJT
2N2221AUA.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Product CategoryBipolar Power
Supplier PackageUA
Standard Package NameUA
Minimum DC Current Gain30@0.1mA@10V|35@1mA@10V|40@10mA@10V|40@150mA@10V|20@500mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin UA Waffle
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