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GP BJT 2N2222AUB1
STMicroelectronics
2N2222AUB1
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Not Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2.54 |
| Package Height | 1.42(Max) |
| Package Length | 3.05 |
| Product Category | Bipolar Power |
| Supplier Package | LCC-3UB |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 30@0.1A@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 730 |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 75 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@15mA@150mA|5@50mA@500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@15mA@150mA|1@50mA@500mA |
| Description |
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