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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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GP BJT 2N2222AUBT
STMicroelectronics
2N2222AUBT
--
Diodes, Transistors and Thyristors
GP BJT
2N2222AUBT.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.54
Package Height1.42(Max)
Package Length3.05
Product CategoryBipolar Power
Supplier PackageCase UB
SVHC Exceeds ThresholdYes
Minimum DC Current Gain30@0.1A@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)730
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|5@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 40V 0.8A 730mW 4-Pin Case UB Tray
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