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2N2907
2N2907
GP BJT 2N2907
Microchip Technology
2N2907
--
Diodes, Transistors and Thyristors
GP BJT
2N2907.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
ECCN (US)EAR99
PackagingBag
AutomotiveNo
Part StatusActive
ConfigurationSingle
Supplier PackageDie
Standard Package NameDie
Minimum DC Current Gain75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V
Number of Elements per Chip1
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.3@15mA@150mA|2.6@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|1.6@50mA@500mA
Description
Trans GP BJT PNP 40V 0.6A 400mW 3-Pin TO-18
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