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2N2919U
2N2919U
GP BJT 2N2919U
Microchip Technology
2N2919U
--
Diodes, Transistors and Thyristors
GP BJT
2N2919U.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
ConfigurationDual
Package Width6.35(Max)
Package Height2.03(Max)
Package Length4.44(Max)
Product CategoryBipolar Small Signal
Supplier PackageCase U
Standard Package NameModule
Minimum DC Current Gain60@10uA@5V|100@100uA@5V|150@1mA@5V
Number of Elements per Chip2
Maximum Power Dissipation (mW)350
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)70
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1@100uA@1mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@100uA@1mA
Description
Trans GP BJT NPN 60V 0.03A 350mW 6-Pin Case U
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