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2N2920AHR - 5207/002/03
2N2920AHR - 5207/002/03
GP BJT 2N2920AHR - 5207/002/03
STMicroelectronics
2N2920AHR - 5207/002/03
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
Diameter9.25(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingStrip
Pin Count6
AutomotiveNo
Lead ShapeThrough Hole
PCB changed6
Part StatusUnconfirmed
ConfigurationDual
Package Height6.47(Max)
Product CategoryBipolar Power
Supplier PackageTO-77
SVHC Exceeds ThresholdYes
Minimum DC Current Gain300@1mA@5V|225@0.1mA@5V|150@10uA@5V
Number of Elements per Chip2
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)60(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1@0.1mA@1mA
Maximum Collector-Emitter Saturation Voltage (V)0.35@0.1mA@1mA
Description
Trans GP BJT NPN 60V 0.03A 1000mW 6-Pin TO-77 Strip
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