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2N3442G
2N3442G
GP BJT 2N3442G
onsemi
2N3442G
--
Diodes, Transistors and Thyristors
GP BJT
2N3442G.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain7.5@10A@4V|20@3A@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)117000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)160
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)140
Maximum Collector-Emitter Saturation Voltage (V)5@2A@10A
Description
Trans GP BJT NPN 140V 10A 117000mW 3-Pin(2+Tab) TO-3 Tray
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