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2N3635UB
2N3635UB
GP BJT 2N3635UB
Microchip Technology
2N3635UB
--
Diodes, Transistors and Thyristors
GP BJT
2N3635UB.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Power
Supplier PackageCase UB
Minimum DC Current Gain55@0.1mA@10V|60@150mA@10V|100@50mA@10V|100@10mA@10V|90@1mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)140
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)140
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|0.9@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@10mA|0.6@5mA@50mA
Description
Trans GP BJT PNP 140V 1A 1000mW 4-Pin Case UB Waffle
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