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2N3738
2N3738
GP BJT 2N3738
Microchip Technology
2N3738
--
Diodes, Transistors and Thyristors
GP BJT
2N3738.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain30@50mA@10V|40@100mA@10V|25@250mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)250
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 200
Maximum Collector-Emitter Voltage (V)225
Maximum Collector-Emitter Saturation Voltage (V)2.5@25mA@250mA
Description
Trans GP BJT NPN 225V 1A 20000mW 3-Pin(2+Tab) TO-66 Tray
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