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2N3904,126
2N3904,126
GP BJT 2N3904,126
NXP
2N3904,126
--
Diodes, Transistors and Thyristors
GP BJT
2N3904,126.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.2(Max)
Package Height5.2(Max)
Package Length4.8(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Minimum DC Current Gain80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V|60@0.1mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)300(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)0.85@1mA@10mA|0.95@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.2@5mA@50mA
Description
Trans GP BJT NPN 40V 0.2A 500mW 3-Pin TO-92 Ammo
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