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2N4261UB
2N4261UB
GP BJT 2N4261UB
Microchip Technology
2N4261UB
--
Diodes, Transistors and Thyristors
GP BJT
2N4261UB.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Small Signal
Supplier PackageCase UB
Minimum DC Current Gain25@1mA@1V|30@10mA@1V|20@30mA@1V
Supplier Temperature GradeCommercial
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)15
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Collector-Emitter Saturation Voltage (V)0.15@0.1mA@1mA|0.35@1mA@10mA
Description
Trans GP BJT PNP 15V 0.03A 200mW 4-Pin Case UB Waffle
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