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2N4401G
2N4401G
GP BJT 2N4401G
onsemi
2N4401G
--
Diodes, Transistors and Thyristors
GP BJT
2N4401G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)0.95@15mA@150mA|1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|0.75@50mA@500mA
Description
Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Box
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