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GP BJT 2N4449UA
Microchip Technology
2N4449UA
--
Diodes, Transistors and Thyristors
GP BJT
2N4449UA.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
ConfigurationSingle
Product CategoryBipolar Power
Supplier PackageUA
Standard Package NameUA
Minimum DC Current Gain40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)1.2@10mA@100mA|0.9@3mA@30mA|0.85@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.45@10mA@100mA|0.25@3mA@30mA|0.2@1mA@10mA
Description
Trans GP BJT NPN 15V 360mW 4-Pin UA
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