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2N4854
2N4854
GP BJT 2N4854
Microchip Technology
2N4854
--
Diodes, Transistors and Thyristors
GP BJT
2N4854.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN|PNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusUnconfirmed
ConfigurationDual
Package Height4.7(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-78
Standard Package NameTO
Minimum DC Current Gain50@150mA@1V|35@100uA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|35@300mA@10V
Number of Elements per Chip2
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.25@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA
Description
Trans GP BJT NPN/PNP 40V 0.6A 600mW 6-Pin TO-78
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