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2N5038G
2N5038G
GP BJT 2N5038G
onsemi
2N5038G
--
Diodes, Transistors and Thyristors
GP BJT
2N5038G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain20@12A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Maximum DC Collector Current (A)20
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)150
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)90
Maximum Base Emitter Saturation Voltage (V)3.3@5A@20A
Maximum Collector-Emitter Saturation Voltage (V)2.5@5A@20A
Description
Trans GP BJT NPN 90V 20A 140000mW 3-Pin(2+Tab) TO-3 Tray
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