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2N5088BU
2N5088BU
GP BJT 2N5088BU
onsemi
2N5088BU
--
Diodes, Transistors and Thyristors
GP BJT
2N5088BU.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain300@10uA@5V|350@1mA@5V|300@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)35
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (nA)50
Maximum Collector-Emitter Saturation Voltage (V)0.5@1mA@10mA
Description
Trans GP BJT NPN 30V 0.1A 625mW 3-Pin TO-92 Bag
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