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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2N5153ESY1
2N5153ESY1
GP BJT 2N5153ESY1
STMicroelectronics
2N5153ESY1
--
Diodes, Transistors and Thyristors
GP BJT
2N5153ESY1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.08(Max)
Package Height10.92(Max)
Package Length10.67(Max)
Product CategoryBipolar Power
Supplier PackageTO-257
Standard Package NameTO-257
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@5A@5V|70@2.5A@5V|50@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)5.5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.45@0.25A@2.5A|2.2@0.5A@5A
Maximum Collector-Emitter Saturation Voltage (V)1.5@0.5A@5A
Description
Trans GP BJT PNP 80V 5A 3300mW 3-Pin(3+Tab) TO-257 T/R
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