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GP BJT 2N5153RSHRGW
STMicroelectronics
2N5153RSHRGW
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Type | PNP |
| Material | Si |
| ECCN (US) | EAR99 |
| Configuration | Single |
| Product Category | Bipolar Power |
| Minimum DC Current Gain | 40@5A@5V|70@2.5A@5V|50@50mA@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3300 |
| Maximum DC Collector Current (A) | 5 |
| Maximum Emitter Base Voltage (V) | 5.5 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | 200 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base Emitter Saturation Voltage (V) | 1.45@0.25A@2.5A|2.2@0.5A@5A |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.5@0.5A@5A |
| Description |
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