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2N5154ESY
2N5154ESY
GP BJT 2N5154ESY
STMicroelectronics
2N5154ESY
--
Diodes, Transistors and Thyristors
GP BJT
2N5154ESY.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingStrip
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width5.08(Max)
Package Height10.92(Max)
Package Length10.67(Max)
Product CategoryBipolar Power
Supplier PackageTO-257
Standard Package NameTO-257
Minimum DC Current Gain50@50mA@5V|70@2.5A@5V|40@5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)2.2@0.5A@5A|1.45@0.25A@2.5A
Maximum Collector-Emitter Saturation Voltage (V)1.45@250mA@2.5A|1.5@0.5A@5A
Description
Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-257 Strip
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