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2N5192G
2N5192G
GP BJT 2N5192G
onsemi
2N5192G
--
Diodes, Transistors and Thyristors
GP BJT
2N5192G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain20@1.5A@2V|7@4A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)2(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)100000
Maximum Collector-Emitter Saturation Voltage (V)0.6@0.15A@1.5A|1.4@1A@4A
Description
Trans GP BJT NPN 80V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
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