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2N5195
2N5195
GP BJT 2N5195
STMicroelectronics
2N5195
--
Diodes, Transistors and Thyristors
GP BJT
2N5195.pdf
Specification
Product AttributeAttribute Value
HTS8542.33.00.01
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.7(Max)
Package Height10.8(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageSOT-32
Standard Package NameTO-126
SVHC Exceeds ThresholdYes
Minimum DC Current Gain20@1.5A@2V|7@4A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)2(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.6@0.15A@1.5A|1.2@1A@4A
Description
Trans GP BJT PNP 80V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube
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