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2N5401
2N5401
GP BJT 2N5401
onsemi
2N5401
--
Diodes, Transistors and Thyristors
GP BJT
2N5401.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
SVHCYes
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
SVHC Exceeds ThresholdYes
Minimum DC Current Gain50@50mA@5V|60@10mA@5V|50@1mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)150
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)1@5mA@50mA|1@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@5mA@50mA|0.2@1mA@10mA
Description
Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Box
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