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2N5401YBU
2N5401YBU
GP BJT 2N5401YBU
onsemi
2N5401YBU
--
Diodes, Transistors and Thyristors
GP BJT
2N5401YBU.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain60@10mA@5V|30@1mA@5V|50@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)400
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)150
Maximum Base Emitter Saturation Voltage (V)1@5mA@50mA|1@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.5@5mA@50mA
Description
Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Bag
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