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2N5428
2N5428
GP BJT 2N5428
Microchip Technology
2N5428
--
Diodes, Transistors and Thyristors
GP BJT
2N5428.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusUnconfirmed
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain40@5A@2V|60@2A@2V|60@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Maximum DC Collector Current (A)7
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)2@0.7A@7A|1.2@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)1.2@0.7A@7A|0.7@0.2A@2A
Description
Trans GP BJT NPN 80V 7A 40000mW 3-Pin(2+Tab) TO-66
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