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2N5550TFR
2N5550TFR
GP BJT 2N5550TFR
onsemi
2N5550TFR
--
Diodes, Transistors and Thyristors
GP BJT
2N5550TFR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain60@1mA@5V|60@10mA@5V|20@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)140
Maximum Base Emitter Saturation Voltage (V)1.2@5mA@50mA|1@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.25@5mA@50mA
Description
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R
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